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APTM100A46FT1G
Phase leg MOSFET Power Module
5 Q1 7 8 Q2 9 10 1 2 12 3 4 NTC 6 11
VDSS = 1000V RDSon = 460m typ @ Tj = 25C ID = 19A @ Tc = 25C
Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
Features * Power MOS 8TM Fast FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration
* * * Benefits * * * * * *
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25C Tc = 80C Max ratings 1000 19 14 120 30 552 357 16 Unit V A V m W A
December, 2007 1-5 APTM100A46FT1G - Rev 0
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM100A46FT1G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Tj = 25C VDS = 1000V VGS = 0V Tj = 125C VGS = 10V, ID = 16A VGS = VDS, ID = 2.5mA VGS = 30 V Min Typ Max 250 1000 552 5 100 Unit A m V nA
3
460 4
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 16A Resistive switching @ 25C VGS = 15V VBus = 667V ID = 16A RG = 2.2 Min Typ 6800 715 92 260 46 125 36 37 140 35 ns nC Max Unit pF
Source - Drain diode ratings and characteristics
Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 16A Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min Typ Max 19 14 1 25 290 600 Unit A V V/ns ns C
IS = - 16A VR = 100V diS/dt = 100A/s
1.3 3.5
dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 16A di/dt 1000A/s VDD 667V Tj 125C
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December, 2007
APTM100A46FT1G
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40 2.5
Typ
Max 0.35 150 125 100 4.7 80
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Resistance @ 25C R25 B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 3952
Max
Unit k K
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
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3-5
APTM100A46FT1G - Rev 0
December, 2007
APTM100A46FT1G
Typical Performance Curve
Low Voltage Output Characteristics 50
VGS=10V
Low Voltage Output Characteristics 30
TJ=125C
ID, Drain Current (A)
40
TJ=25C
ID, Drain Current (A)
25 20 15
5V VGS=6, 7, 8 &9V
30
TJ=125C
20 10 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) Normalized RDSon vs. Temperature
10 5 0 0 5 10 15 20 25 30 VDS, Drain to Source Voltage (V) Transfert Characteristics 30
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 4.5V
RDSon, Drain to Source ON resistance
3 2.5 2 1.5 1 0.5 0 25 50 75 100 125 150
ID, Drain Current (A)
VGS=10V ID=16A
25 20 15 10 5 0 1
TJ=125C
TJ=25C
2
3
4
5
6
TJ, Junction Temperature (C)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source VGS, Gate to Source Voltage 12 10 8 6
VDS=800V ID=16A TJ=25C VDS=500V VDS=200V
Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 10000 1000 100 10
December, 2007 APTM100A46FT1G - Rev 0
Ciss
Coss Crss
4 2 0 0 40 80 120 160 200 240 280 Gate Charge (nC)
1 0 50 100 150 200 VDS, Drain to Source Voltage (V)
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4-5
APTM100A46FT1G
Drain Current vs Source to Drain Voltage ISD, Reverse Drain Current (A) 50 40
TJ=125C
30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2
TJ=25C
VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W)
0.9
0.3
0.7
0.2
0.5 0.3
0.1
0.1 0.05 Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTM100A46FT1G - Rev 0
Microsemi reserves the right to change, without notice, the specifications and information contained herein
December, 2007

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